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TENTATIVE TOSHIBA INTELLIGENT POWER MODULE MIG10J503 MIG10J503 MIG10J503 is an intelligent power module for three-phase inverter system. The 4th generation low saturation voltage trench gate IGBT and FRD are connected to a three-phase full bridge type, and IC by the original high-voltage SOI(silicon-on-insulator) process drives these directly in response to a PWM signal. Moreover, since high-voltage level-shifter is built in high-voltage IC, while being able to perform a direct drive without the interface with which the upper arm IGBT is insulated, the drive power supply of an upper arm can be driven with a bootstrap system, and the simplification of a system is possible. Weight:TBD g (Typ.) Furthermore, each lower arm emitter terminal has been independent so that detection can perform current detection at the time of vector control by current detection resistance of a lower arm. The protection function builds in Under Voltage Protection, Short Circuit Protection, and Over Temperature Protection. Original high thermal conduction resin is adopted as a package, and low heat resistance is realized. Feature * * * * * * * * The 4th generation trench gate thin wafer NPT IGBT is adopted. FRD is built in. The level shift circuit by high-voltage IC is built in. The simplification of a high side driver power supply is possible by the bootstrap system. Short Circuit Protection, Over Temperature Protection , and the Power Supply Under Voltage Protection function are built in. Short Circuit Protection and Over Temperature Protection state are outputted. The lower arm emitter terminal has been independent by each phase for the purpose of the current detection at the time of vector control. Low thermal resistance by adoption of original high thermal conduction resin. Since this product is MOS structure, it should be careful of static electricity in the case of handling. This tentative specification is a development examination stage, and may change the contents without a preliminary announcement. TOSHIBA CONFIDENTIAL 1 TENTATIVE Pin Assignment MIG10J503 1 2 3 4 5 6 7 8 9 PGND U U V BB U PGND V V V BB V PGND W W V BB W Mark side V CC U FO U IN U IN X SGND U BS U CU V CC V FO V IN V IN Y SGND V BS V CV V CC W FO W IN W IN Z SGND W BS W CW 30 29 28 26 24 22 20 18 17 16 14 12 11 10 15 13 23 21 19 27 25 Marking Toshiba logotype JAPAN MIG10J503 product number *| Lot No. TOSHIBA CONFIDENTIAL 2 TENTATIVE BLOCK DIAGRAM MIG10J503 3 V BB U V CC U 30 FO U IN U IN X 29 28 27 Over Temp Under Volatge Under Voltage High Side Driver Low Side Driver Over Current 2 U SGND U 26 BS U CU V CC V FO V IN V IN Y 25 24 23 22 21 20 Under Volatge 1 6 PGND U V BB V High Side Under Voltage Low Side Driver Over Temp Over Current Driver 5 V SGND V 19 BS V CV 18 17 4 9 PGND V V BB W V CC W 16 FO W IN W IN Z 15 14 13 Over Temp Under Volatge Under Voltage High Side Driver Low Side Driver Over Current 8 W SGND W 12 BS W CW 11 10 7 PGND W TOSHIBA CONFIDENTIAL 3 TENTATIVE Pin Description Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Symbol PGND U U V BB U PGND V V V BB V PGND W W V BB W CW BS W SGND W IN Z IN W FO W Pin Description U-Phase Power Ground pin*iConnect a current detecting resistor between this pin and SGND U pin) U-Phase output pin U-Phase high-voltage power supply pin V-Phase Power Ground pin*iConnect a current detecting resistor between this pin and SGND V pin) V-Phase output pin V-Phase high-voltage power supply pin W-Phase Power Ground pin*iConnect a current detecting resistor between this pin and SGND W pin) W-Phase output pin W-Phase high-voltage power supply pin W-Phase bootstrap capacitor connecting pin(-) W-Phase bootstrap capacitor connecting pin(+) W-Phase Signal Ground pin W-Phase low -side input pin(Negative logic) W-Phase high-side input pin(Negative logic) W-Phase Diagnosis output pin(open drain output. Wired or connection can be performed with the Diagnosis output pin of other Phase.) W-Phase control power supply (+15V typ.) V-Phase bootstrap capacitor connecting pin(-) V-Phase bootstrap capacitor connecting pin(+) V-Phase Signal Ground pin V-Phase low -side input pin (Negative logic) V-Phase high-side input pin (Negative logic) V-Phase Diagnosis output pin(open drain output. Wired or connection can be performed with the Diagnosis output pin of other Phase.) V-Phase control power supply (+15V typ.) U-Phase bootstrap capacitor connecting pin (-) U-Phase bootstrap capacitor connecting pin (+) U-Phase Signal Ground pin U-Phase low -side input pin (Negative logic) U-Phase high-side input pin (Negative logic) U-Phase Diagnosis output pin(open drain output. Wired or connection can be performed with the Diagnosis output pin of other Phase.) U-Phase control power supply (+15V typ.) MIG10J503 16 17 18 19 20 21 22 V CC W CV BS V SGND V IN Y IN V FO V 23 24 25 26 27 28 29 V CC V CU BS U SGND U IN X IN U FO U 30 V CC U TOSHIBA CONFIDENTIAL 4 TENTATIVE Truth Tble Protection Circuit Detection State High Side Under Voltage Low Side Under Voltage Short Circuit Over Temperature Input IN(X)High Side Arm H H L L H H L L H H L L H H L L H H L L H H L L H H L L IN(X)Low Side Arm H L H L H L H L H L H L H L H L H L H L H L H L H L H L hfas High Side Arm OFF OFF ON OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF State MIG10J503 Fault Output FO(X) OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF ON ON ON ON ON ON ON ON ON ON ON ON Low Side Arm OFF ON OFF OFF OFF ON OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF OFF Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Detecting Detecting Detecting Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Detecting Detecting Detecting Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Detecting Detecting Detecting Detecting Detecting Detecting Detecting Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Detecting Detecting Detecting Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Detecting Detecting Detecting Detecting Detecting Detecting Detecting Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Un-Detecting Detecting Detecting Detecting Detecting *E The above has indicated a part for single arm. *E There is no relevance of operation between arms. *E When the input of a high side arm and a low side arm is simultaneously set to "L", IGBT of a high side arm and a low side arm turns off. *E (X) terminal is turned on in the meantime at the same time, as for the output of Phase which detected the FO load short circuit state, it will maintain the OFF between 10ms, if a Short Current Protection detects a Short Current state. Although an incoming signal is reset by an upper arm and a lower arm being simultaneously set to "H" in the back in this state, OFF of an output and FO (X) are maintained between 10ms. Although FO (X) is turned off when FO (X) terminal for 10ms will not be in the simultaneous "H" state of an upper arm and a lower arm in during ON time, an output maintains OFF. This release is made by an upper arm and a lower arm being simultaneously set to "H." (Short Current Protection is a non-repetition. When FO (X) turns on, please turn off the input of all Phase.) *E an Over Temperature Protection circuit detects an Over Temperature state, while the output of Phase which If detected the Over Temperature Protection state is turned off, FO (X) terminal turns it on. This state will return operation, if temperature falls to Over Temperature Protection detection return temperature (Over Temperature Protection temperature- Over Temperature Protection hysteresis). TOSHIBA CONFIDENTIAL 5 TENTATIVE Absolute Maximum Rating (Tj = 25C) Item Symbol V BB Power Supply Voltage V BB (surge) V CC V BS Collector-Emitter Voltage Each Collector Current (DC) Each Collector Current (PEAK) Input Voltage Fault Output Supply Voltage Fault Output Current PGND-SGND Voltage Difference Output Voltage Rate of Change Collector Power Dissipation (Per 1 IGBT Chip) Collector Power Dissipation (Per 1 FRD Chip) VCES MIG10J503 Unit V V V V u A V V mA u ku /E s W W C C C Vrms Rating 450 500 20 20 600 *}10 *}20 20 20 15 *}5 20 43 25 -20~100 150 -40~125 2500 (1min) IC ICP V IN V FO IFO V PGND-SGND dv/dt PC PC TOPE Tj Tstg V ISO Operating Temperature Junction Temperature Storage Temperature Isolation Voltage*i60Hz sinusoidal ,AC*j TOSHIBA CONFIDENTIAL 6 TENTATIVE Electrical Characteristics (Tj = 25C) Item Symbol V BB Operating Power Supply Voltage V CC V BS IBB ICC Condition V BB = 400 V V IN = 5 V*iP arm*j V CC = 15 VV IN = 5 V*iP arm*j V CC = 15 VV IN = 0 V*iP arm*j V CC = 15 VV IN = 5 V*iP arm*j V CC = 15 VV IN = 0 V*iP arm*j V IN = "H" V IN = "L" V IN = "H"*"L" V IN = "L"*"H" V CC = 15 VV IN = 5V V CC = 15 VV IN = 0 V V CC = V BS** 15V, IC = 10 A, Upper Arm V CC = 15V, IC = 10 A, Lower Arm IF = 10 A, Upper Arm IF = 10 A, Lower Arm IFO = 5 mA, Short Current Protection Short Current Protection Over Temperature Protection Over Temperature Protection return Upper Arm Under Voltage Protection Upper Arm Under Voltage Protection recovery Lower Arm Under Voltage Protection Lower Arm Under Voltage Protection recovery V BB = 300 V, IC = 10A, Inductance Load V BB = 300 V, IC = 10A, Inductance Load V BB = 300 V, IC = 10A, Inductance Load V BB = 300 V, IC = 10A, Inductance Load V BB = 300 V, IC = 10A, Inductance Load V BB = 300 V, IC = 10A, Inductance Load V BB = 300 V, IC = 10A, Inductance Load *iinclude each Phase*j V BB = 300 V, IC = 10A, Inductance Load *iinclude each Phase*j V BB = 300 V, IC = 10A, Inductance Load V BB = 300 V, IF = 10 A Min. 50 13.5 13.5 3.5 50 75 0.45 0.5 150 10.0 10.5 10.5 11.0 1 MIG10J503 Typ. 300 15 15 0.8 1.1 330 470 2.8 2.3 0.5 0.5 100 150 1.5 1.5 1.3 1.3 0.8 0.5 1 165 20 11.0 11.5 11.5 12.0 1.3 0.1 1.4 1.2 0.1 1.3 0 Max. 400 17 17 1 P .5 P .5 600 1000 1.5 200 300 2.0 2.0 1.9 1.9 1.2 0.55 2 200 12.0 12.5 V 12.5 13.0 TBD TBD TBD TBD TBD TBD 300 ns s V V s C C V u mA mA mA E A A V V Unit Current dissipation IBS V IH V IL input Voltage hysteresis V INhys IIH IIL IGBT Saturation Voltage V sat U V sat L FRD Forward Voltage Fault Output Voltage Short Current Protection Voltage Short Current Protection delay time Over Temperature Protection Over Temperature Protection hys. Under Voltage Protection Under Voltage Protection recovery Under Voltage Protection Under Voltage Protection recovery IGBT turn-on propagation delay time IGBT rise time IGBT turn-on time IGBT turn-off propagation delay time IGBT fall time IGBT turn-off time IGBT vertical arm turn-on, a turn-off propagation delay time lag IGBT vertical arm turn-on, a turn-off propagation delay time lag daed time FRD reverse recovery time V FU V FL V FO VR V R " TSD TSD V BSUVD V BSUVR VccUVD VccUVR tdON tr tON tdOFF tf tOFF | tOFF k - tON g | input Voltage Input Current A V | tOFF g - tON k | tdaed trr 0 100 300 ns s ns TOSHIBA CONFIDENTIAL 7 TENTATIVE MIG10J503 The example of an application circuit (in the case of not insulating with a control side) 5V V CC U FO U IN U IN X 30 29 28 Under Under Volt Volt age age High Side Driver Low Side Driver Over Curre nt 3 V BB 2 U PGND U 1 6 V BB 27 SGND U 26 + BS U 25 *e 24 CU V CC V 23 FO V 22 IN V 21 IN Y 20 SGND V 19 + BS V 18 Over Temp CONTROL CIRCUIT Under Under Volt Volt age age High Side Driver 5 Low Side Driver Over Curre nt V PGND V 4 9 V BB M + High voltage Over Temp C V 17 V CC W 16 FO W 15 IN W 14 IN Z 13 SGND W 12 + BS W CW + 15V 11 10 Under Under Volt Volt age age High Side Driver 8 Low Side Driver Over Curre nt W PGND W 7 Over Temp TOSHIBA CONFIDENTIAL 8 TENTATIVE Package Outline MIG10J503 Unit*F m m The A section details The C section details The B section details TOSHIBA CONFIDENTIAL 9 |
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